I want to build NAND/AND gate using LIM architecture with MTJ/CMOS. so i first build the write circuitry . when i calculate the power it is in Megawatt. Normally I saw power in nano or micro watt. I am using STT PMA MTJ model from spin library.
Vdda=1.5 and transistor width of 4Twrite circuitry has width 480nm and all other transistor width 120nm. I am attaching the schematic and circuit diagram. Please help me . why power is too high.
