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5 Terminal MOSFET to exploit the Bipolar Operation of MOSFET

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Recently I was studying the lateral and vertical parasitic BJT present in MOSFET. So can we use these BJTs. One of the instance I saw in the literature was a 5 terminal device which i think is Gate, Base, Emitter, Collector and Substrate terminal. So can we make such a 5 terminal device in cadence or is it even possible? The picture is attached as an attachment.


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