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Operating point parameters for BSIM-IMG devices

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DC Operating point info for devices using BSIM-IMG model (mainstream model for FDSOI transistors) seems to contain only charge and capacitance information.

BSIM transistor models have traditionally included relative terminal voltages, transconductance, threshold voltage, etc. which are very useful for design. They're included in Operating point parameters for BSIM4, BSIM-CMG and even UTSOI (non-VT based model) models. Wondering if there's a reason they're excluded for BSIM-IMG devices or if they're just not included because the model is used relatively rarely. Does anyone have insights into this? The question is probably too specific - but any insight is much appreciated! :)


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