Hello,
I ran a basic dc op simulation on a 60V NMOS. The drain of the device is at 49V, gate =3V, source = 2.3V and it is running 250nA current. When, I print the dc operating point of the device, it says it is operating in region=4. It is my understanding that region=4 is breakdown region for a MOSFET but the device appears to be working as intended in circuit dc/transient simulation. What is the criteria used by spectre to determine if the device is operating in region 4 ? I have attached a snapshot of the dc operating parameters of the device.
Thanks.
