Hello! I am using Monte Calro simulation. There are process and mismatch in the Monte Calro.
According to my understanding, process is the main factor for the variance between different wafers and different dies while mismatch is the main factor for the variance on the same die. For the same die, the process can be considered the same.(For example, mosfets on a die are all tt,ss,sf,fs,ff, or any other corner).
I am using AMS0.35um process. The model files offer cmostm(for tt), cmosmc(for monte calro), cmoswp(for ff), cmosws(for ss), cmoswo(for fs), cmoswz(for sf) and cmostmwn(for worst noise). When I want to run Monte Calro simulation, I need to select cmosmc.
Now, I want to simulate the influence from mismatch in different corners.(process is not selected while mismatch is selected). But when process is not selectecd, it seems that I couldn't change the corner. That's to say the corner keep the same. And I compared the model parameters in cmostm(for tt) and cmosmc(for monte calro), I found a little difference. Therefore, I think the corner of cmosmc is a corner near tt.
Is there any way to change the process to a fixed corner and simulate the influence from mismatch? For example, change the corner to ss, sf, fs or ff in monte calro and simulate the influence from mismatch.
Thank you very much!